- Together with its development partner CEA-Leti, Weebit demonstrates parameters on the production level for its ReRAM technology at 28 nm
- Important step in developing the technology for the embedded memory market
- Weebit’s ReRAM technology can support smaller geometries used in AI, autonomous driving, 5G and advanced IoT
- Weebit’s ReRAM is well positioned to be a key embedded non-volatile memory technology for advanced process nodes where flash memory is no longer possible
HOD HASHARON, Israel, September 30, 2021 (GLOBE NEWSWIRE) – Weebit Nano Limited (ASX: WBT), a leading developer of next generation memory technologies for the global semiconductor industry, along with its development partner CEA-Leti, have demonstrated production-level parameters of Weebit’s Resistive Random Access Memory (ReRAM) technology in a 28 nanometer (nm) process.
The production-level demonstration of parameters of Weebit’s ReRAM technology at 28 nm is an important step in the production of embedded non-volatile memory (NVM) for applications such as AI, autonomous driving, 5G and advanced Internet of Things (IoT) processors.
Weebit and CEA-Leti, the French research institute recognized as a world leader in the field of microelectronics, jointly tested, characterized and measured functional 1 megabit (Mb) ReRAM arrays in a 28 nm process technology to 300 millimeters (mm) Wafers, the largest diameter used in mass production and the standard in advanced nodes.
The 28nm ReRAM arrays are implemented with a small and energy efficient switching device that takes full advantage of the low power and low voltage capabilities of the 28nm process and enables up to a 4-fold increase in storage density. Tests of Weebits one-transistor-one-resistor (1T1R) ReRAM arrays, embedded in 28 nm Fully Depleted Silicon on Insulator (FDSOI), proved, among other quality parameters at the production level, its robustness with a very good service life and data retention.
This successful demonstration of reliability and robustness at 28 nm strongly positions Weebit’s ReRAM technology as a key technology in NVM for advanced processes where it is technically or economically no longer possible to embed flash memory technology.
Olivier Faynot, Head of Silicon Components Department at CEA-Leti, said: “The semiconductor industry is constantly moving towards smaller geometries for advanced processes. With embedded flash faced with scalability issues below 40 nm, organizations today use complex and inefficient solutions when embedding it in their chips. The industry has asked for new technology to replace flash memory in advanced geometries, and these results show that Weebit has a viable solution. “
Commenting on another important milestone in the development of Weebit, CEO Coby Hanoch said: “Weebit has already demonstrated the significant advantages of its ReRAM technology in larger geometries through its close partnership with CEA-Leti, and we have now shown that we can successfully scale this technology down to 28 nm. Mark Liu, chairman of TSMC, the world’s largest factory, recently named 28nm the “sweet spot for our embedded memory applications” as the 28nm geometry is widely used in a number of applications and is considered the gateway to the most advanced process nodes.
“Given the success we’ve had in reducing Weebit technology so far, we believe our ReRAM technology can scale to the most advanced nodes, allowing Weebit to offer a highly competitive embedded storage solution, the flash memory for high end applications replaced.
“Weebit’s first commercial deal with SkyWater was an important milestone for the company as it enabled the commercial validation of our innovative technology and enabled us to bring Weebit’s cutting edge ReRAM technology to mass production at 130nm. With our ReRAM technology now reaching production-level parameters at 28 nm, we are significantly expanding the spectrum of potential industries and the entire addressable market for Weebit’s state-of-the-art storage technology. ”
This announcement has been approved for publication by the board of directors of Weebit Nano Limited.
About Weebit Nano Limited
Weebit Nano Ltd. is a leading developer of next generation semiconductor memory technology. The company’s breakthrough Resistive RAM (ReRAM) addresses the growing need for storage solutions with significantly higher performance and lower power consumption in a range of new electronic products such as Internet of Things (IoT) devices, smartphones, robotics, autonomous vehicles, 5G communications and artificial ones Intelligence.
With ReRAM from Weebit, semiconductor memory elements can be significantly faster, cheaper, more reliable and more energy efficient than those using existing flash memory solutions. Because it is based on factory-friendly materials, the technology can be quickly and easily integrated into existing workflows and processes without the need for special equipment or large investments.
Weebit Nano and the Weebit Nano logo are trademarks or registered trademarks of Weebit Nano Ltd. in the US and other countries. Other company, product, and service names may be trademarks or service marks of others.
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Jen Bernier-Santarini, Weebit Nano
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